CPD19-CHD8-06
8A,600V Bare die,87.000 X 87.000 mils,Rectifier-Hyperfast <25ns
Specifications
Average Forward Current
8 A
Case Type
CHIP,WAFFLE
Continuous Reverse Voltage
600 V
ECCN Code
EAR99
Forward Voltage (VF)
2.2 V
HTS Code
8541.10.0040
Junction Capacitance (CJ)
35 pF
Junction Temperature (Tj)
-65 — 175 °C
Peak Forward Surge Current
70 A
Peak Repetitive Reverse Voltage
600 V
Reverse Recovery Time (trr)
25 ns
Reverse Voltage Leakage Current (IR)
500 µA
Reverse Voltage Leakage Current (IR)
10 µA
RMS Reverse Voltage
420 V
Storage Temperature (Tstg)
-65 — 175 °C
Thermal Resistance Junction-Lead
5 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 8A,600V Bare die,87.000 X 87.000 mils,Rectifier-Hyperfast <25ns | WafflePack | 100 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Active Device, Rectifier | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Switching Diode | Analytical Test Report |
| Analytical Test Report:Wafer Transistor | Analytical Test Report |
| Analytical Test Report:Wafer Zener | Analytical Test Report |
| CPD19-CHD8-06_WPD.PDF | Device Datasheet |
| Package Detail Document:WAFER | Package Detail Document |