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CPD22-1N5622
Bare die,50.000 X 50.000 mils,Rectifier-General Purpose,High Voltage Rectifier
Specifications
Average Forward Current
1 A
Case Type
CHIP,WAFFLE
Continuous Reverse Voltage
1 kV
ECCN Code
EAR99
Forward Voltage (VF)
1.2 V
HTS Code
8541.10.0040
Junction Capacitance (CJ)
35 pF
Junction Temperature (Tj)
-65 — 200 °C
Peak Forward Surge Current
40 A
Peak Repetitive Reverse Voltage
1 kV
Reverse Breakdown Voltage (BVR)
1100 V
Reverse Recovery Time (trr)
2000 ns
Reverse Voltage Leakage Current (IR)
25 µA
Reverse Voltage Leakage Current (IR)
0.5 µA
RMS Reverse Voltage
700 V
Storage Temperature (Tstg)
-65 — 200 °C
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | Bare die,50.000 X 50.000 mils,Rectifier-General Purpose,High Voltage Rectifier | WafflePack | 400 | PBFREE | |
| Active | Bare die,50.000 X 50.000 mils,Rectifier-General Purpose,High Voltage Rectifier | WafflePack | 400 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Active Device, Rectifier | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Switching Diode | Analytical Test Report |
| Analytical Test Report:Wafer Transistor | Analytical Test Report |
| Analytical Test Report:Wafer Zener | Analytical Test Report |
| CPD22-1N5622_WPD.PDF | Device Datasheet |
| Package Detail Document:WAFER | Package Detail Document |
| Process Change Notice:CPD22-1N5622 | Process Change Notice |