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CPD40-CTLSH5-100
Bare die,68.000 X 68.000 mils,5.0A, 100V Schottky Rectifier
Specifications
Average Forward Current
5 A
Case Type
CHIP,WAFFLE
Continuous Reverse Voltage
100 V
ECCN Code
EAR99
Forward Voltage (VF)
0.8 V
HTS Code
8541.10.0040
Junction Capacitance (CJ)
475 pF
Junction Temperature (Tj)
-55 — 150 °C
Peak Repetitive Forward Current
150 A
Peak Repetitive Reverse Voltage
100 V
Reverse Breakdown Voltage (BVR)
100 V
Reverse Voltage Leakage Current (IR)
15 µA
RMS Reverse Voltage
70 V
Storage Temperature (Tstg)
-55 — 150 °C
Thermal Resistance Junction-Ambient
80 °C/W
Thermal Resistance Junction-Lead
15 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | Bare die,68.000 X 68.000 mils,5.0A, 100V Schottky Rectifier | WafflePack | 324 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Active Device, Rectifier | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Switching Diode | Analytical Test Report |
| Analytical Test Report:Wafer Transistor | Analytical Test Report |
| Analytical Test Report:Wafer Zener | Analytical Test Report |
| CPD40-CTLSH5-100_WPD.PDF | Device Datasheet |
| Package Detail Document:WAFER | Package Detail Document |