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CPD41-1N4150

200mA,50V Bare die,19.685 X 19.685 mils,Diode-Switching

Specifications

Average Forward Current
200 mA
Case Type
CHIP,WAFFLE
Continuous Forward Current
400 mA
Device Family
Diodes and Rectifiers
ECCN Code
EAR99
Forward Recovery Time (tfr)
10 ns
Forward Voltage (VF)
0.54 — 0.62 V
Forward Voltage (VF)
0.66 — 0.74 V
Forward Voltage (VF)
0.76 — 0.86 V
Forward Voltage (VF)
0.82 — 0.92 V
Forward Voltage (VF)
0.87 — 1 V
HTS Code
8541.10.0040
Junction Capacitance (CJ)
2.5 pF
Junction Temperature (Tj)
-65 — 200 °C
Peak Forward Surge Current
1 A
Peak Forward Surge Current
4 A
Peak Repetitive Forward Current
600 mA
Peak Repetitive Reverse Voltage
50 V
Power Dissipation
500 mW
Reverse Breakdown Voltage (BVR)
75 V
Reverse Recovery Time (trr)
4 ns
Reverse Recovery Time (trr)
4 ns
Reverse Recovery Time (trr)
6 ns
Reverse Voltage Leakage Current (IR)
0.1 µA
Reverse Voltage Leakage Current (IR)
100 µA
Storage Temperature (Tstg)
-65 — 200 °C

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued200mA,50V Bare die,19.685 X 19.685 mils,Diode-SwitchingWafflePack400PBFREE

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