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CPD41-1N4150
200mA,50V Bare die,19.685 X 19.685 mils,Diode-Switching
Specifications
Average Forward Current
200 mA
Case Type
CHIP,WAFFLE
Continuous Forward Current
400 mA
ECCN Code
EAR99
Forward Recovery Time (tfr)
10 ns
Forward Voltage (VF)
0.66 — 0.74 V
Forward Voltage (VF)
0.76 — 0.86 V
Forward Voltage (VF)
0.82 — 0.92 V
Forward Voltage (VF)
0.87 — 1 V
Forward Voltage (VF)
0.54 — 0.62 V
HTS Code
8541.10.0040
Junction Capacitance (CJ)
2.5 pF
Junction Temperature (Tj)
-65 — 200 °C
Peak Forward Surge Current
4 A
Peak Forward Surge Current
1 A
Peak Repetitive Forward Current
600 mA
Peak Repetitive Reverse Voltage
50 V
Power Dissipation
500 mW
Reverse Breakdown Voltage (BVR)
75 V
Reverse Recovery Time (trr)
4 ns
Reverse Recovery Time (trr)
6 ns
Reverse Recovery Time (trr)
4 ns
Reverse Voltage Leakage Current (IR)
100 µA
Reverse Voltage Leakage Current (IR)
0.1 µA
Storage Temperature (Tstg)
-65 — 200 °C
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued | 200mA,50V Bare die,19.685 X 19.685 mils,Diode-Switching | WafflePack | 400 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Active Device, Rectifier | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Switching Diode | Analytical Test Report |
| Analytical Test Report:Wafer Transistor | Analytical Test Report |
| Analytical Test Report:Wafer Zener | Analytical Test Report |
| CPD41.PDF | Device Datasheet |
| Package Detail Document:WAFER | Package Detail Document |
| Process Change Notice:CPD41 REPLACED WITH CPD93V | Process Change Notice |
| Product EOL Notice:BLANKET PDN-BARE DIE PRODUCTS | Product EOL Notice |