CPD48V-CBAT54
Bare die,13.777 X 13.777 mils,Diode-Schottky (<1A),0.2A, 30V Schottky Diode
Specifications
Case Type
CHIP,WAFFLE
Continuous Forward Current
200 mA
Continuous Reverse Voltage
30 V
Diode Capacitance (Cd)
10 pF
ECCN Code
EAR99
Forward Voltage (VF)
0.4 V
Forward Voltage (VF)
0.5 V
Forward Voltage (VF)
0.24 V
Forward Voltage (VF)
0.8 V
Forward Voltage (VF)
0.32 V
HTS Code
8541.10.0040
Junction Temperature (Tj)
-65 — 150 °C
Peak Forward Surge Current
600 mA
Peak Repetitive Forward Current
300 mA
Power Dissipation
350 mW
Reverse Recovery Time (trr)
5 ns
Reverse Voltage Leakage Current (IR)
2 µA
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
357 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | Bare die,13.777 X 13.777 mils,Diode-Schottky (<1A),0.2A, 30V Schottky Diode | WafflePack | 400 | PBFREE | |
| Active | Bare die,13.777 X 13.777 mils,Diode-Schottky (<1A),0.2A, 30V Schottky Diode | WafflePack | 400 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Active Device, Rectifier | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Switching Diode | Analytical Test Report |
| Analytical Test Report:Wafer Transistor | Analytical Test Report |
| Analytical Test Report:Wafer Zener | Analytical Test Report |
| CPD48V-CBAT54_WPD.PDF | Device Datasheet |
| Package Detail Document:WAFER | Package Detail Document |
| Spice Model:Spice Model CPD48V-CBAT54 | Spice Model |