CPD51V-1N5711
Bare die,11.800 X 11.800 mils,High Voltage Schottky Diode
Specifications
Case Type
CHIP,WAFFLE
Continuous Forward Current
15 mA
ECCN Code
EAR99
Forward Voltage (VF)
0.41 V
HTS Code
8541.10.0040
Junction Capacitance (CJ)
2 pF
Junction Temperature (Tj)
-65 — 150 °C
Peak Forward Surge Current
50 mA
Peak Repetitive Reverse Voltage
70 V
Power Dissipation
250 mW
Reverse Breakdown Voltage (BVR)
70 V
Reverse Recovery Time (trr)
5 ns
Reverse Voltage Leakage Current (IR)
0.2 µA
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
500 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | Bare die,11.800 X 11.800 mils,High Voltage Schottky Diode | WafflePack | 400 | PBFREE | |
| Active | Bare die,11.800 X 11.800 mils,High Voltage Schottky Diode | WafflePack | 400 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Active Device, Rectifier | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Switching Diode | Analytical Test Report |
| Analytical Test Report:Wafer Transistor | Analytical Test Report |
| Analytical Test Report:Wafer Zener | Analytical Test Report |
| CPD51V-1N5711_WPD.pdf | Device Datasheet |
| Package Detail Document:WAFER | Package Detail Document |