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AEM

CPD65-BAV45

50mA,35V Bare die,11.800 X 11.800 mils,Diode-Switching

Specifications

Average Forward Current
50 mA
Case Type
CHIP,WAFFLE
Continuous Forward Current
50 mA
Continuous Reverse Voltage
20 V
ECCN Code
EAR99
Forward Voltage (VF)
1 V
HTS Code
8541.10.0040
Junction Capacitance (CJ)
1.3 pF
Junction Temperature (Tj)
-65 — 125 °C
Peak Repetitive Forward Current
100 mA
Peak Repetitive Reverse Voltage
35 V
Reverse Recovery Time (trr)
600 ns
Reverse Voltage Leakage Current (IR)
0.00025 µA
Reverse Voltage Leakage Current (IR)
0.00001 µA
Reverse Voltage Leakage Current (IR)
0.000005 µA
Storage Temperature (Tstg)
-65 — 125 °C
Thermal Resistance Junction-Ambient
500 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued50mA,35V Bare die,11.800 X 11.800 mils,Diode-SwitchingWafflePack400PBFREE
Discontinued50mA,35V Bare die,11.800 X 11.800 mils,Diode-SwitchingWafflePack400PBFREE

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