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AEM

CPD66X-1N3595

Bare die,17.500 X 17.500 mils,Diode-Switching,Low Leakage Switching Diode

Specifications

Average Forward Current
150 mA
Case Type
CHIP,WAFFLE
Continuous Forward Current
225 mA
Continuous Reverse Voltage
125 V
Device Family
Diodes and Rectifiers
ECCN Code
EAR99
Forward Voltage (VF)
0.54 — 0.69 V
Forward Voltage (VF)
0.62 — 0.77 V
Forward Voltage (VF)
0.65 — 0.8 V
Forward Voltage (VF)
0.75 — 0.88 V
Forward Voltage (VF)
0.79 — 0.92 V
Forward Voltage (VF)
0.83 — 1 V
HTS Code
8541.10.0040
Junction Capacitance (CJ)
8 pF
Junction Temperature (Tj)
-65 — 200 °C
Peak Forward Surge Current
500 mA
Peak Forward Surge Current
4 A
Peak Repetitive Forward Current
600 mA
Peak Repetitive Reverse Voltage
150 V
Power Dissipation
500 mW
Reverse Breakdown Voltage (BVR)
150 V
Reverse Recovery Time (trr)
3000 ns
Reverse Voltage Leakage Current (IR)
0.3 µA
Reverse Voltage Leakage Current (IR)
0.001 µA
Reverse Voltage Leakage Current (IR)
0.5 µA
Reverse Voltage Leakage Current (IR)
3 µA
Storage Temperature (Tstg)
-65 — 200 °C

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
ActiveBare die,17.500 X 17.500 mils,Diode-Switching,Low Leakage Switching DiodeWafflePack400PBFREE
ActiveBare die,17.500 X 17.500 mils,Diode-Switching,Low Leakage Switching DiodeWafflePack400PBFREE
Special Order ItemBare die,17.500 X 17.500 mils,Diode-Switching,Low Leakage Switching DiodeWafflePack20PBFREE

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