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AEM

CPD66X-1N3595

Bare die,17.500 X 17.500 mils,Diode-Switching,Low Leakage Switching Diode

Specifications

Average Forward Current
150 mA
Case Type
CHIP,WAFFLE
Continuous Forward Current
225 mA
Continuous Reverse Voltage
125 V
ECCN Code
EAR99
Forward Voltage (VF)
0.62 — 0.77 V
Forward Voltage (VF)
0.65 — 0.8 V
Forward Voltage (VF)
0.75 — 0.88 V
Forward Voltage (VF)
0.79 — 0.92 V
Forward Voltage (VF)
0.83 — 1 V
Forward Voltage (VF)
0.54 — 0.69 V
HTS Code
8541.10.0040
Junction Capacitance (CJ)
8 pF
Junction Temperature (Tj)
-65 — 200 °C
Peak Forward Surge Current
4 A
Peak Forward Surge Current
500 mA
Peak Repetitive Forward Current
600 mA
Peak Repetitive Reverse Voltage
150 V
Power Dissipation
500 mW
Reverse Breakdown Voltage (BVR)
150 V
Reverse Recovery Time (trr)
3000 ns
Reverse Voltage Leakage Current (IR)
0.001 µA
Reverse Voltage Leakage Current (IR)
0.5 µA
Reverse Voltage Leakage Current (IR)
3 µA
Reverse Voltage Leakage Current (IR)
0.3 µA
Storage Temperature (Tstg)
-65 — 200 °C

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
ActiveBare die,17.500 X 17.500 mils,Diode-Switching,Low Leakage Switching DiodeWafflePack400PBFREE
ActiveBare die,17.500 X 17.500 mils,Diode-Switching,Low Leakage Switching DiodeWafflePack400PBFREE
Special Order ItemBare die,17.500 X 17.500 mils,Diode-Switching,Low Leakage Switching DiodeWafflePack20PBFREE

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