CPD66X-1N457A
200mA,70V Bare die,17.500 X 17.500 mils,Diode-Low Leakage
Specifications
Average Forward Current
200 mA
Case Type
CHIP,WAFFLE
Continuous Forward Current
500 mA
Continuous Reverse Voltage
60 V
ECCN Code
EAR99
Forward Voltage (VF)
1 V
HTS Code
8541.10.0040
Junction Capacitance (CJ)
6 pF
Junction Temperature (Tj)
-65 — 200 °C
Peak Forward Surge Current
4 A
Peak Repetitive Reverse Voltage
70 V
Power Dissipation
500 mW
Reverse Breakdown Voltage (BVR)
70 V
Reverse Voltage Leakage Current (IR)
5 µA
Reverse Voltage Leakage Current (IR)
0.025 µA
Storage Temperature (Tstg)
-65 — 200 °C
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 200mA,70V Bare die,17.500 X 17.500 mils,Diode-Low Leakage | WafflePack | 400 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Active Device, Rectifier | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Switching Diode | Analytical Test Report |
| Analytical Test Report:Wafer Transistor | Analytical Test Report |
| Analytical Test Report:Wafer Zener | Analytical Test Report |
| CPD66X-1N457A_WPD.PDF | Device Datasheet |
| Package Detail Document:WAFER | Package Detail Document |
| Process Change Notice:CPD66X DOPANT CHANGE | Process Change Notice |
| Spice Model:Spice Model CPD66 | Spice Model |