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AEM

CPD66X-1N485B

200mA,200V Bare die,17.500 X 17.500 mils,Diode-Low Leakage

Specifications

Average Forward Current
200 mA
Case Type
CHIP,WAFFLE
Continuous Forward Current
500 mA
Continuous Reverse Voltage
180 V
ECCN Code
EAR99
Forward Voltage (VF)
1 V
HTS Code
8541.10.0040
Junction Temperature (Tj)
-65 — 200 °C
Peak Forward Surge Current
4 A
Peak Forward Surge Current
1 A
Peak Repetitive Forward Current
600 mA
Peak Repetitive Reverse Voltage
200 V
Power Dissipation
500 mW
Reverse Breakdown Voltage (BVR)
200 V
Reverse Voltage Leakage Current (IR)
5 µA
Reverse Voltage Leakage Current (IR)
0.025 µA
Storage Temperature (Tstg)
-65 — 200 °C

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active200mA,200V Bare die,17.500 X 17.500 mils,Diode-Low LeakageWafflePack400PBFREE

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