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AEM

CPD66X-CMPD3003

200mA,200V Bare die,17.500 X 17.500 mils,Diode-Low Leakage

Specifications

Average Forward Current
200 mA
Case Type
CHIP,WAFFLE
Continuous Forward Current
600 mA
Continuous Reverse Voltage
180 V
ECCN Code
EAR99
Forward Voltage (VF)
0.72 — 0.83 V
Forward Voltage (VF)
0.8 — 0.89 V
Forward Voltage (VF)
0.83 — 0.93 V
Forward Voltage (VF)
0.87 — 1.1 V
Forward Voltage (VF)
0.9 — 1.15 V
Forward Voltage (VF)
0.62 — 0.72 V
HTS Code
8541.10.0040
Junction Capacitance (CJ)
4 pF
Junction Temperature (Tj)
-65 — 150 °C
Peak Forward Surge Current
1 A
Peak Forward Surge Current
2 A
Peak Repetitive Forward Current
700 mA
Peak Repetitive Reverse Voltage
200 V
Power Dissipation
350 mW
Reverse Breakdown Voltage (BVR)
200 V
Reverse Voltage Leakage Current (IR)
3 µA
Reverse Voltage Leakage Current (IR)
0.01 µA
Reverse Voltage Leakage Current (IR)
5 µA
Reverse Voltage Leakage Current (IR)
0.001 µA
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
357 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active200mA,200V Bare die,17.500 X 17.500 mils,Diode-Low LeakageWafflePack400PBFREE

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