CPD69-1N5616
1A,400V Bare die,42.500 X 42.500 mils,Rectifier-General Purpose
Specifications
Average Forward Current
1 A
Case Type
CHIP,WAFFLE
Continuous Reverse Voltage
400 V
ECCN Code
EAR99
Forward Voltage (VF)
1.2 V
HTS Code
8541.10.0040
Junction Capacitance (CJ)
35 pF
Junction Temperature (Tj)
-65 — 200 °C
Peak Forward Surge Current
40 A
Peak Repetitive Reverse Voltage
400 V
Reverse Breakdown Voltage (BVR)
440 V
Reverse Recovery Time (trr)
2000 ns
Reverse Voltage Leakage Current (IR)
25 µA
Reverse Voltage Leakage Current (IR)
0.5 µA
RMS Reverse Voltage
280 V
Storage Temperature (Tstg)
-65 — 200 °C
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 1A,400V Bare die,42.500 X 42.500 mils,Rectifier-General Purpose | WafflePack | 400 | PBFREE | |
| Active | 1A,400V Bare die,42.500 X 42.500 mils,Rectifier-General Purpose | WafflePack | 400 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Active Device, Rectifier | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Switching Diode | Analytical Test Report |
| Analytical Test Report:Wafer Transistor | Analytical Test Report |
| Analytical Test Report:Wafer Zener | Analytical Test Report |
| CPD69-1N5616_WPD.PDF | Device Datasheet |
| Package Detail Document:WAFER | Package Detail Document |
| Process Change Notice:CPD69 Wafer Thickness Increase | Process Change Notice |