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AEM

CPD80V-1N3070

200mA,175V Bare die,16.100 X 16.100 mils,Diode-Switching

Specifications

Average Forward Current
200 mA
Case Type
CHIP,WAFFLE
Continuous Forward Current
500 mA
Continuous Reverse Voltage
175 V
ECCN Code
EAR99
Forward Voltage (VF)
1 V
HTS Code
8541.10.0040
Junction Capacitance (CJ)
5 pF
Junction Temperature (Tj)
-65 — 200 °C
Peak Forward Surge Current
4 A
Peak Forward Surge Current
1 A
Peak Repetitive Forward Current
600 mA
Peak Repetitive Reverse Voltage
175 V
Power Dissipation
500 mW
Reverse Breakdown Voltage (BVR)
200 V
Reverse Recovery Time (trr)
50 ns
Reverse Voltage Leakage Current (IR)
100 µA
Reverse Voltage Leakage Current (IR)
0.1 µA
Storage Temperature (Tstg)
-65 — 200 °C

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active200mA,175V Bare die,16.100 X 16.100 mils,Diode-SwitchingWafflePack400PBFREE
Active200mA,175V Bare die,16.100 X 16.100 mils,Diode-SwitchingWafflePack400PBFREE

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