CPD80V-2003
Bare die,16.100 X 16.100 mils,High Voltage Switching Diode
Specifications
Average Forward Current
200 mA
Case Type
CHIP,WAFFLE
Continuous Forward Current
225 mA
Continuous Reverse Voltage
350 V
ECCN Code
EAR99
Forward Voltage (VF)
1 V
HTS Code
8541.10.0040
Junction Capacitance (CJ)
5 pF
Junction Temperature (Tj)
-65 — 150 °C
Peak Forward Surge Current
1 A
Peak Forward Surge Current
4 A
Peak Repetitive Forward Current
625 mA
Peak Repetitive Reverse Voltage
375 V
Power Dissipation
350 mW
Reverse Breakdown Voltage (BVR)
375 V
Reverse Recovery Time (trr)
50 ns
Reverse Voltage Leakage Current (IR)
1 µA
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
357 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Special Order Item | Bare die,16.100 X 16.100 mils,High Voltage Switching Diode | WafflePack | 20 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Active Device, Rectifier | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Switching Diode | Analytical Test Report |
| Analytical Test Report:Wafer Transistor | Analytical Test Report |
| Analytical Test Report:Wafer Zener | Analytical Test Report |
| CPD80V.PDF | Device Datasheet |
| Package Detail Document:WAFER | Package Detail Document |