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AEM

CPD80V-CMPD2003

200mA,250V Bare die,16.100 X 16.100 mils,Diode-Switching

Specifications

Average Forward Current
200 mA
Case Type
CHIP,WAFFLE
Continuous Forward Current
250 mA
Continuous Reverse Voltage
200 V
ECCN Code
EAR99
Forward Voltage (VF)
1.25 V
Forward Voltage (VF)
1 V
HTS Code
8541.10.0040
Junction Capacitance (CJ)
5 pF
Junction Temperature (Tj)
-65 — 150 °C
Peak Forward Surge Current
1 A
Peak Forward Surge Current
4 A
Peak Repetitive Forward Current
625 mA
Peak Repetitive Reverse Voltage
250 V
Power Dissipation
350 mW
Reverse Breakdown Voltage (BVR)
250 V
Reverse Recovery Time (trr)
50 ns
Reverse Voltage Leakage Current (IR)
100 µA
Reverse Voltage Leakage Current (IR)
0.1 µA
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
357 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active200mA,250V Bare die,16.100 X 16.100 mils,Diode-SwitchingWafflePack400PBFREE

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