CPD82X-CMDSH2-3
200mA,30V Bare die,14.570 X 14.570 mils,Diode-Schottky (<1A)
Specifications
Average Forward Current
200 mA
Case Type
CHIP,WAFFLE
ECCN Code
EAR99
Forward Voltage (VF)
0.245 V
Forward Voltage (VF)
0.35 V
Forward Voltage (VF)
0.55 V
Forward Voltage (VF)
0.186 V
HTS Code
8541.10.0040
Junction Capacitance (CJ)
6 pF
Junction Temperature (Tj)
-65 — 150 °C
Peak Forward Surge Current
1 A
Peak Repetitive Reverse Voltage
30 V
Power Dissipation
250 mW
Reverse Breakdown Voltage (BVR)
30 V
Reverse Voltage Leakage Current (IR)
50 µA
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
500 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 200mA,30V Bare die,14.570 X 14.570 mils,Diode-Schottky (<1A) | WafflePack | 400 | PBFREE | |
| Active | 200mA,30V Bare die,14.570 X 14.570 mils,Diode-Schottky (<1A) | WafflePack | 400 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Active Device, Rectifier | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Switching Diode | Analytical Test Report |
| Analytical Test Report:Wafer Transistor | Analytical Test Report |
| Analytical Test Report:Wafer Zener | Analytical Test Report |
| CPD82X-CMDSH2-3_WPD.PDF | Device Datasheet |
| Package Detail Document:WAFER | Package Detail Document |