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AEM

CPD83V-1N3064

Bare die,11.027 X 11.027 mils,Diode-Switching,High Speed Switching Diode

Specifications

Average Forward Current
75 mA
Case Type
CHIP,WAFFLE
Continuous Forward Current
115 mA
Continuous Reverse Voltage
50 V
ECCN Code
EAR99
Forward Voltage (VF)
0.61 — 0.71 V
Forward Voltage (VF)
1 V
Forward Voltage (VF)
0.505 — 0.575 V
Forward Voltage (VF)
0.55 — 0.65 V
HTS Code
8541.10.0040
Junction Capacitance (CJ)
2 pF
Junction Temperature (Tj)
-65 — 200 °C
Peak Forward Surge Current
2 A
Peak Repetitive Forward Current
225 mA
Peak Repetitive Reverse Voltage
75 V
Power Dissipation
250 mW
Reverse Breakdown Voltage (BVR)
75 V
Reverse Recovery Time (trr)
4 ns
Reverse Voltage Leakage Current (IR)
100 µA
Reverse Voltage Leakage Current (IR)
0.1 µA
Storage Temperature (Tstg)
-65 — 200 °C

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
ActiveBare die,11.027 X 11.027 mils,Diode-Switching,High Speed Switching DiodeWafflePack400PBFREE

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