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AEM

CPD83V-1N4448

150mA,100V Bare die,11.027 X 11.027 mils,Diode-Switching

Specifications

Average Forward Current
150 mA
Case Type
CHIP,WAFFLE
Continuous Forward Current
200 mA
Continuous Reverse Voltage
75 V
ECCN Code
EAR99
Forward Voltage (VF)
1 V
Forward Voltage (VF)
0.62 — 0.72 V
HTS Code
8541.10.0040
Junction Capacitance (CJ)
4 pF
Junction Temperature (Tj)
-65 — 200 °C
Peak Forward Surge Current
2 A
Peak Repetitive Reverse Voltage
100 V
Power Dissipation
500 mW
Reverse Breakdown Voltage (BVR)
100 V
Reverse Breakdown Voltage (BVR)
75 V
Reverse Recovery Time (trr)
4 ns
Reverse Voltage Leakage Current (IR)
50 µA
Reverse Voltage Leakage Current (IR)
3 µA
Reverse Voltage Leakage Current (IR)
0.025 µA
Storage Temperature (Tstg)
-65 — 200 °C

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active150mA,100V Bare die,11.027 X 11.027 mils,Diode-SwitchingWafflePack400PBFREE

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