Skip to main content
AEM

CPD83V-1N4454

150mA,75V Bare die,11.027 X 11.027 mils,Diode-Switching

Specifications

Average Forward Current
150 mA
Case Type
CHIP,WAFFLE
Continuous Forward Current
200 mA
ECCN Code
EAR99
Forward Voltage (VF)
1 V
HTS Code
8541.10.0040
Junction Capacitance (CJ)
2 pF
Junction Temperature (Tj)
-65 — 200 °C
Peak Forward Surge Current
4 A
Peak Repetitive Reverse Voltage
75 V
Power Dissipation
500 mW
Reverse Breakdown Voltage (BVR)
75 V
Reverse Recovery Time (trr)
4 ns
Reverse Recovery Time (trr)
2 ns
Reverse Voltage Leakage Current (IR)
100 µA
Reverse Voltage Leakage Current (IR)
0.1 µA
Storage Temperature (Tstg)
-65 — 200 °C

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active150mA,75V Bare die,11.027 X 11.027 mils,Diode-SwitchingWafflePack400PBFREE
Active150mA,75V Bare die,11.027 X 11.027 mils,Diode-SwitchingWafflePack400PBFREE

Resources

Recently Viewed