CPD83V-BAS16
Bare die,11.027 X 11.027 mils,High Speed Switching Diode
Specifications
Case Type
CHIP,WAFFLE
Continuous Forward Current
250 mA
Continuous Reverse Voltage
75 V
ECCN Code
EAR99
Forward Voltage (VF)
0.97 V
Forward Voltage (VF)
0.85 V
HTS Code
8541.10.0040
Junction Capacitance (CJ)
2 pF
Junction Temperature (Tj)
-65 — 150 °C
Peak Forward Surge Current
2 A
Peak Forward Surge Current
1 A
Peak Forward Surge Current
4 A
Peak Repetitive Forward Current
250 mA
Peak Repetitive Reverse Voltage
120 V
Power Dissipation
350 mW
Reverse Breakdown Voltage (BVR)
120 V
Reverse Recovery Time (trr)
4 ns
Reverse Voltage Leakage Current (IR)
5 µA
Reverse Voltage Leakage Current (IR)
0.025 µA
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
357 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | Bare die,11.027 X 11.027 mils,High Speed Switching Diode | WafflePack | 400 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Active Device, Rectifier | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Switching Diode | Analytical Test Report |
| Analytical Test Report:Wafer Transistor | Analytical Test Report |
| Analytical Test Report:Wafer Zener | Analytical Test Report |
| CPD83V-BAS16_WPD.PDF | Device Datasheet |
| Package Detail Document:WAFER | Package Detail Document |
| Spice Model:Spice Model CPD83V | Spice Model |