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AEM

CPD83V-CMPD914

100V Bare die,11.027 X 11.027 mils,Diode-Switching

Specifications

Case Type
CHIP,WAFFLE
Continuous Forward Current
250 mA
Continuous Reverse Voltage
75 V
ECCN Code
EAR99
Forward Voltage (VF)
1 V
HTS Code
8541.10.0040
Junction Capacitance (CJ)
4 pF
Junction Temperature (Tj)
-65 — 150 °C
Peak Forward Surge Current
2 A
Peak Forward Surge Current
1 A
Peak Forward Surge Current
4 A
Peak Repetitive Forward Current
250 mA
Peak Repetitive Reverse Voltage
100 V
Power Dissipation
350 mW
Reverse Breakdown Voltage (BVR)
100 V
Reverse Recovery Time (trr)
4 ns
Reverse Voltage Leakage Current (IR)
5 µA
Reverse Voltage Leakage Current (IR)
0.025 µA
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
357 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active100V Bare die,11.027 X 11.027 mils,Diode-SwitchingWafflePack400PBFREE

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