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AEM

CPD91V-CD6001

Bare die,11.030 X 11.030 mils,Low Leakage Switching Diode

Specifications

Average Forward Current
250 mA
Case Type
CHIP,WAFFLE
Continuous Reverse Voltage
75 V
ECCN Code
EAR99
Forward Voltage (VF)
0.95 V
Forward Voltage (VF)
1.1 V
Forward Voltage (VF)
0.85 V
HTS Code
8541.10.0040
Junction Capacitance (CJ)
2 pF
Junction Temperature (Tj)
-65 — 150 °C
Peak Forward Surge Current
1 A
Peak Forward Surge Current
4 A
Peak Repetitive Reverse Voltage
100 V
Power Dissipation
250 mW
Reverse Breakdown Voltage (BVR)
100 V
Reverse Recovery Time (trr)
3000 ns
Reverse Voltage Leakage Current (IR)
0.0005 µA
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Case
500 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Special Order ItemBare die,11.030 X 11.030 mils,Low Leakage Switching DiodeWafflePack200PBFREE
Special Order ItemBare die,11.030 X 11.030 mils,Low Leakage Switching DiodeWafflePack200PBFREE

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