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CPG004-CDFG6517N

17A,650V Bare die,165.000 X 65.000 mils,MOSFET

Specifications

Case Type
CHIP,WAFFLE
Common Source Input Capacitance (Ciss)
125 pF
Common Source Output Capacitance (Coss)
41 pF
Common Source Reverse Transfer Capacitance (Crss)
0.4 pF
Continuous Drain Current
17 A
Diode Forward On Voltage (VSD)
2.4 V
Drain-Source Breakdown Voltage (BVDSS)
650 V
Drain-Source Voltage
650 V
ECCN Code
EAR99
Effective Output Capacitance, Energy Related (Coss(er))
59 pF
Effective Output Capacitance, Time Related (Coss(tr))
82 pF
Fall Time (tf)
4 ns
Gate Leakage Current, Forward (IGSSF)
70000 nA
Gate Leakage Current, Reverse (IGSSR)
70000 nA
Gate Threshold Voltage (VGS(th))
1.2 — 2.5 V(1.7 V Typical)
Gate-Drain Charge (Qgd)
1.2 nC
Gate-Source Charge (Qgs)
0.3 nC
Gate-Source Voltage (VGS)
-1.4 — 7 V
HTS Code
8541.29.0040
Junction Temperature (Tj)
-55 — 150 °C
Maximum Pulsed Drain Current
32 A
Power Dissipation
113 W
Power Dissipation
1.1 W
Rise Time (tr)
5 ns
Saturation Drain Current (IDSS)
25 µA
Static Drain-Source On Resistance (rDS(ON))
0.14 Ω
Storage Temperature (Tstg)
-55 — 150 °C
Total Gate Charge (Qg)
3.5 nC
Turn-off Delay Time (tOFF)
4 ns
Turn-on Delay Time (tON)
3 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Please Call17A,650V Bare die,165.000 X 65.000 mils,MOSFETWafflePack60PBFREE

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