CPZ18-1N4623
4.3V,250mW Bare die,13.779 X 13.779 mils,Diode-Zener
Specifications
Case Type
CHIP,WAFFLE
ECCN Code
EAR99
Forward Voltage (VF)
1 V
HTS Code
8541.10.0040
Junction Temperature (Tj)
-65 — 200 °C
Maximum Zener Current
65 mA
Noise Density (ND)
1 uV/√Hz
Power Dissipation
250 mW
Reverse Voltage Leakage Current (IR)
4 µA
Storage Temperature (Tstg)
-65 — 200 °C
Zener Impedance (ZZT)
1600 Ω
Zener Voltage (VZ)
4.085 — 4.515 V(4.3 V Typical)
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued, Stock Only | 4.3V,250mW Bare die,13.779 X 13.779 mils,Diode-Zener | WafflePack | 400 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Active Device, Rectifier | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Switching Diode | Analytical Test Report |
| Analytical Test Report:Wafer Transistor | Analytical Test Report |
| Analytical Test Report:Wafer Zener | Analytical Test Report |
| CPZ18-1N4614-4627_WPD.PDF | Device Datasheet |
| Package Detail Document:WAFER | Package Detail Document |
| Process Change Notice:CPZ18 REPLACED WITH CPZ28X | Process Change Notice |