CPZ18-1N5228B
3.9V,500mW Bare die,13.779 X 13.779 mils,Diode-Zener
Specifications
Case Type
CHIP,WAFFLE
ECCN Code
EAR99
Forward Voltage (VF)
1.2 V
HTS Code
8541.10.0040
Junction Temperature (Tj)
-65 — 200 °C
Maximum Temperature Coefficient (ΘVZ)
-0.06 %/°C
Power Dissipation
500 mW
Reverse Voltage Leakage Current (IR)
10 µA
Storage Temperature (Tstg)
-65 — 200 °C
Zener Impedance (ZZT)
23 Ω
Zener Knee Impedance (ZZK)
1900 Ω
Zener Voltage (VZ)
3.705 — 4.095 V(3.9 V Typical)
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 3.9V,500mW Bare die,13.779 X 13.779 mils,Diode-Zener | WafflePack | 400 | PBFREE | |
| Active | 3.9V,500mW Bare die,13.779 X 13.779 mils,Diode-Zener | WafflePack | 400 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Active Device, Rectifier | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Switching Diode | Analytical Test Report |
| Analytical Test Report:Wafer Transistor | Analytical Test Report |
| Analytical Test Report:Wafer Zener | Analytical Test Report |
| CPZ18.PDF | Device Datasheet |
| Package Detail Document:WAFER | Package Detail Document |
| Process Change Notice:CPZ18 REPLACED WITH CPZ28X | Process Change Notice |