CPZ19-1N5257B
33V,500mW Bare die,17.716 X 17.716 mils,Diode-Zener
Specifications
Case Type
CHIP,WAFFLE
ECCN Code
EAR99
Forward Voltage (VF)
1.2 V
HTS Code
8541.10.0040
Junction Temperature (Tj)
-65 — 200 °C
Maximum Temperature Coefficient (ΘVZ)
0.092 %/°C
Power Dissipation
500 mW
Reverse Voltage Leakage Current (IR)
0.1 µA
Storage Temperature (Tstg)
-65 — 200 °C
Zener Impedance (ZZT)
58 Ω
Zener Knee Impedance (ZZK)
700 Ω
Zener Voltage (VZ)
31.35 — 34.65 V(33 V Typical)
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Limited Availability | 33V,500mW Bare die,17.716 X 17.716 mils,Diode-Zener | WafflePack | 400 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Active Device, Rectifier | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Switching Diode | Analytical Test Report |
| Analytical Test Report:Wafer Transistor | Analytical Test Report |
| Analytical Test Report:Wafer Zener | Analytical Test Report |
| CPZ19.PDF | Device Datasheet |
| Package Detail Document:WAFER | Package Detail Document |
| Process Change Notice:CPZ19 REPLACED WITH CPZ28 | Process Change Notice |