CPZ19-BZX84C39
39V,350mW Bare die,17.716 X 17.716 mils,Diode-Zener
Specifications
Case Type
CHIP,WAFFLE
ECCN Code
EAR99
Forward Voltage (VF)
0.9 V
HTS Code
8541.10.0040
Junction Temperature (Tj)
-65 — 150 °C
Maximum Temperature Coefficient (ΘVZ)
0.09 %/°C
Maximum Zener Current
6.4 mA
Power Dissipation
350 mW
Reverse Voltage Leakage Current (IR)
0.05 µA
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
357 °C/W
Zener Impedance (ZZT)
130 Ω
Zener Knee Impedance (ZZK)
350 Ω
Zener Voltage (VZ)
37 — 41 V(39 V Typical)
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued | 39V,350mW Bare die,17.716 X 17.716 mils,Diode-Zener | WafflePack | 400 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Active Device, Rectifier | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Switching Diode | Analytical Test Report |
| Analytical Test Report:Wafer Transistor | Analytical Test Report |
| Analytical Test Report:Wafer Zener | Analytical Test Report |
| CPZ19-BZX84C6V8_SERIES_WPD.PDF | Device Datasheet |
| Package Detail Document:WAFER | Package Detail Document |
| Process Change Notice:CPZ19 REPLACED WITH CPZ28 | Process Change Notice |
| Product EOL Notice:BLANKET PDN-BARE DIE PRODUCTS | Product EOL Notice |