CPZ28X-1N5229B
4.3V,500mW Bare die,12.990 X 12.990 mils,Diode-Zener
Specifications
Case Type
CHIP,WAFFLE
ECCN Code
EAR99
Forward Voltage (VF)
1.2 V
HTS Code
8541.10.0040
Junction Temperature (Tj)
-65 — 200 °C
Maximum Temperature Coefficient (ΘVZ)
-0.055 — 0.055 %/°C
Power Dissipation
500 mW
Reverse Voltage Leakage Current (IR)
5 µA
Storage Temperature (Tstg)
-65 — 200 °C
Zener Impedance (ZZT)
22 Ω
Zener Knee Impedance (ZZK)
2000 Ω
Zener Voltage (VZ)
4.085 — 4.515 V(4.3 V Typical)
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 4.3V,500mW Bare die,12.990 X 12.990 mils,Diode-Zener | WafflePack | 400 | PBFREE | |
| Active | 4.3V,500mW Bare die,12.990 X 12.990 mils,Diode-Zener | WafflePack | 20 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Active Device, Rectifier | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Switching Diode | Analytical Test Report |
| Analytical Test Report:Wafer Transistor | Analytical Test Report |
| Analytical Test Report:Wafer Zener | Analytical Test Report |
| CPZ28X-1N5221B_SERIES_WPD.PDF | Device Datasheet |
| Package Detail Document:WAFER | Package Detail Document |
| Process Change Notice:CPZ28x ----> CPZ58X/CPZ59X | Process Change Notice |