CPZ28X-C5231B
Bare die,12.990 X 12.990 mils,0.5W Zener Diode
Specifications
Case Type
CHIP,WAFFLE
ECCN Code
EAR99
Forward Voltage (VF)
1.5 V
HTS Code
8541.10.0040
Junction Temperature (Tj)
-65 — 150 °C
Maximum Zener Current
85 mA
Noise Density (ND)
1 uV/√Hz
Power Dissipation
500 mW
Reverse Voltage Leakage Current (IR)
0.8 µA
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
312.5 °C/W
Thermal Resistance Junction-Lead
150 °C/W
Zener Impedance (ZZT)
1600 Ω
Zener Voltage (VZ)
2.85 — 3.15 V(3 V Typical)
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | Bare die,12.990 X 12.990 mils,0.5W Zener Diode | WafflePack | 20 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Active Device, Rectifier | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Switching Diode | Analytical Test Report |
| Analytical Test Report:Wafer Transistor | Analytical Test Report |
| Analytical Test Report:Wafer Zener | Analytical Test Report |
| CPZ28X-CMPZ5221B_SER_WPD.PDF | Device Datasheet |
| Package Detail Document:WAFER | Package Detail Document |