CPZ28X-CMPZ5230B
350mW Bare die,12.990 X 12.990 mils,Transistor-Small Signal (<=1A)
Specifications
Case Type
CHIP,WAFFLE
ECCN Code
EAR99
Forward Voltage (VF)
0.9 V
HTS Code
8541.10.0040
Junction Temperature (Tj)
-65 — 150 °C
Maximum Temperature Coefficient (ΘVZ)
-0.03 — 0.03 %/°C
Power Dissipation
350 mW
Reverse Voltage Leakage Current (IR)
5 µA
Storage Temperature (Tstg)
-65 — 150 °C
Zener Impedance (ZZT)
19 Ω
Zener Knee Impedance (ZZK)
1900 Ω
Zener Voltage (VZ)
4.465 — 4.935 V(4.7 V Typical)
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 350mW Bare die,12.990 X 12.990 mils,Transistor-Small Signal (<=1A) | WafflePack | 400 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Active Device, Rectifier | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Switching Diode | Analytical Test Report |
| Analytical Test Report:Wafer Transistor | Analytical Test Report |
| Analytical Test Report:Wafer Zener | Analytical Test Report |
| CPZ28X-CMPZ5221B_SER_WPD.PDF | Device Datasheet |
| Package Detail Document:WAFER | Package Detail Document |
| Process Change Notice:CPZ28x ----> CPZ58X/CPZ59X | Process Change Notice |