CPZ33R-CMNTVS12V
18W,9V Bare die,14.200 X 14.200 mils,Transient Voltage Suppressor
Specifications
Breakdown Voltage (VBR)
11.4 — 12.7 V(12 V Typical)
Case Type
CHIP,WAFFLE
Dynamic Resistance (RDYN)
2.56 Ω
ECCN Code
EAR99
Electrical Fast Transient
40 A
ESD Voltage
8 kV
ESD Voltage
8 kV
HTS Code
8541.10.0040
Junction Capacitance (CJ)
6 pF
Junction Capacitance (CJ)
10 pF
Junction Temperature (Tj)
-55 — 150 °C
Maximum Clamping Voltage (VC)
18 V
Peak Pulse Power
18 W
Reverse Stand-Off Voltage
9 V
Reverse Voltage Leakage Current (IR)
0.5 µA
Storage Temperature (Tstg)
-55 — 150 °C
Typical Clamping Voltage (VCL)
30 V
Typical Clamping Voltage (VCL)
20 V
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 18W,9V Bare die,14.200 X 14.200 mils,Transient Voltage Suppressor | WafflePack | 400 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Active Device, Rectifier | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Switching Diode | Analytical Test Report |
| Analytical Test Report:Wafer Transistor | Analytical Test Report |
| Analytical Test Report:Wafer Zener | Analytical Test Report |
| CPZ33R-CMNTVS12V_WPD.PDF | Device Datasheet |
| Package Detail Document:WAFER | Package Detail Document |