CPZ39R-TVS5V0
Bare die,11.000 X 11.000 mils,Quad Array TVS
Specifications
Breakdown Voltage (VBR)
6 — 8 V(7.1 V Typical)
Case Type
CHIP,WAFFLE
Dynamic Resistance (RDYN)
1.45 Ω
ECCN Code
EAR99
Electrical Fast Transient
40 A
ESD Voltage
15 kV
ESD Voltage
15 kV
Forward Voltage (VF)
1.2 V
HTS Code
8541.10.0040
Junction Capacitance (CJ)
5.5 pF
Junction Capacitance (CJ)
10 pF
Junction Temperature (Tj)
-55 — 150 °C
Maximum Clamping Voltage (VC)
12.5 V
Peak Pulse Power
25 W
Reverse Stand-Off Voltage
5 V
Reverse Voltage Leakage Current (IR)
0.25 µA
Storage Temperature (Tstg)
-55 — 150 °C
Typical Clamping Voltage (VCL)
20 V
Typical Clamping Voltage (VCL)
12 V
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Special Order Item | Bare die,11.000 X 11.000 mils,Quad Array TVS | WafflePack | 200 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Active Device, Rectifier | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Switching Diode | Analytical Test Report |
| Analytical Test Report:Wafer Transistor | Analytical Test Report |
| Analytical Test Report:Wafer Zener | Analytical Test Report |
| CPZ39R-CMNTVS5V0_WPD.PDF | Device Datasheet |
| Package Detail Document:WAFER | Package Detail Document |