CPZ58X-1N4100
7.5V,250mW Bare die,12.990 X 12.990 mils,Diode-Zener
Specifications
Case Type
CHIP,WAFFLE
ECCN Code
EAR99
Forward Voltage (VF)
1.1 V
HTS Code
8541.10.0040
Junction Temperature (Tj)
-65 — 200 °C
Maximum Zener Current
31.8 mA
Noise Density (ND)
40 uV/√Hz
Power Dissipation
250 mW
Reverse Voltage Leakage Current (IR)
10 µA
Storage Temperature (Tstg)
-65 — 200 °C
Zener Impedance (ZZT)
200 Ω
Zener Voltage (VZ)
7.125 — 7.875 V(7.5 V Typical)
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 7.5V,250mW Bare die,12.990 X 12.990 mils,Diode-Zener | WafflePack | 400 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Active Device, Rectifier | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Switching Diode | Analytical Test Report |
| Analytical Test Report:Wafer Transistor | Analytical Test Report |
| Analytical Test Report:Wafer Zener | Analytical Test Report |
| CPZ28X-1N4099-4135_WPD.PDF | Device Datasheet |
| Package Detail Document:WAFER | Package Detail Document |