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AEM

CPZ58X-1N4617

2.4V,250mW Bare die,12.990 X 12.990 mils,Diode-Zener

Specifications

Case Type
CHIP,WAFFLE
ECCN Code
EAR99
Forward Voltage (VF)
1 V
HTS Code
8541.10.0040
Junction Temperature (Tj)
-65 — 200 °C
Maximum Zener Current
95 mA
Noise Density (ND)
1 uV/√Hz
Power Dissipation
250 mW
Reverse Voltage Leakage Current (IR)
2 µA
Storage Temperature (Tstg)
-65 — 200 °C
Zener Impedance (ZZT)
1400 Ω
Zener Voltage (VZ)
2.28 — 2.52 V(2.4 V Typical)

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active2.4V,250mW Bare die,12.990 X 12.990 mils,Diode-ZenerWafflePack400PBFREE
Active2.4V,250mW Bare die,12.990 X 12.990 mils,Diode-ZenerWafflePack400PBFREE
Active2.4V,250mW Bare die,12.990 X 12.990 mils,Diode-ZenerWaferPBFREE

Resources

ItemType
Analytical Test Report:Active Device, RectifierAnalytical Test Report
Analytical Test Report:DieAnalytical Test Report
Analytical Test Report:DieAnalytical Test Report
Analytical Test Report:DieAnalytical Test Report
Analytical Test Report:DieAnalytical Test Report
Analytical Test Report:Die AttachAnalytical Test Report
Analytical Test Report:TVS DieAnalytical Test Report
Analytical Test Report:WaferAnalytical Test Report
Analytical Test Report:Wafer/DieAnalytical Test Report
Analytical Test Report:Wafer RectifierAnalytical Test Report
Analytical Test Report:Wafer SchottkyAnalytical Test Report
Analytical Test Report:Wafer SchottkyAnalytical Test Report
Analytical Test Report:Wafer Switching DiodeAnalytical Test Report
Analytical Test Report:Wafer TransistorAnalytical Test Report
Analytical Test Report:Wafer ZenerAnalytical Test Report
Analytical Test Report:Wafer ZenerAnalytical Test Report
Package Detail Document:WAFERPackage Detail Document

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