CPZ58X-1N5524B
5.6V,400mW Bare die,12.990 X 12.990 mils,Diode-Zener
Specifications
Case Type
CHIP,WAFFLE
ECCN Code
EAR99
Forward Voltage (VF)
1.1 V
HTS Code
8541.10.0040
Junction Temperature (Tj)
-65 — 200 °C
Maximum Temperature Coefficient (ΘVZ)
-0.03 — 0.045 %/°C
Power Dissipation
400 mW
Reverse Voltage Leakage Current (IR)
2 µA
Storage Temperature (Tstg)
-65 — 200 °C
Zener Impedance (ZZT)
30 Ω
Zener Voltage (VZ)
5.32 — 5.88 V(5.6 V Typical)
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 5.6V,400mW Bare die,12.990 X 12.990 mils,Diode-Zener | WafflePack | 400 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Active Device, Rectifier | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Switching Diode | Analytical Test Report |
| Analytical Test Report:Wafer Transistor | Analytical Test Report |
| Analytical Test Report:Wafer Zener | Analytical Test Report |
| CPZ28X-1N5518B-5546B_WPD.PDF | Device Datasheet |
| Package Detail Document:WAFER | Package Detail Document |