CPZ58X-BZX84C6V2
6.2V,350mW Bare die,12.990 X 12.990 mils,Diode-Zener
Specifications
Case Type
CHIP,WAFFLE
ECCN Code
EAR99
Forward Voltage (VF)
0.9 V
HTS Code
8541.10.0040
Junction Temperature (Tj)
-65 — 150 °C
Maximum Temperature Coefficient (ΘVZ)
0.04 %/°C
Maximum Zener Current
40 mA
Power Dissipation
350 mW
Reverse Voltage Leakage Current (IR)
3 µA
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
357 °C/W
Zener Impedance (ZZT)
10 Ω
Zener Knee Impedance (ZZK)
150 Ω
Zener Voltage (VZ)
5.8 — 6.6 V(6.2 V Typical)
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 6.2V,350mW Bare die,12.990 X 12.990 mils,Diode-Zener | WafflePack | 400 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Active Device, Rectifier | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Switching Diode | Analytical Test Report |
| Analytical Test Report:Wafer Transistor | Analytical Test Report |
| Analytical Test Report:Wafer Zener | Analytical Test Report |
| CPZ28X-BZX84C2V4_SER_WPD.PDF | Device Datasheet |
| Package Detail Document:WAFER | Package Detail Document |