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Specifications
Bootstrap Supply (BST)
-0.3 — 105 V
Bootstrap Supply to Switch Node (BST-SW)
-0.3 — 6 V
BST Operating Current (IBSTOP)
3 mA
BST Quiescent Current (IBSTQ)
70 µA
BST Undervoltage Hysteresis (VBSTUVHYS)
0.5 V
BST Undervoltage Rising Threshold (VBSTUVR)
3.6 V
Case Type
QFN3X3
Charged Device Model
1 kV
Dead Time HG off to LG on (TDTL)
2 ns
Dead Time HG off to LG on (TDTL)
15 ns
Dead Time LG off to HG on (TDTH)
2 ns
Dead Time LG off to HG on (TDTH)
15 ns
Dead Time Pin Voltage (VDT)
1.21 V
Dead Time Setting for High-to-Low Transition (DTL)
-0.3 — 6 V
Dead Time Setting for Low-to-High Transition (DTH)
-0.3 — 6 V
Device Family
Integrated Circuits
ECCN Code
EAR99
Enable Logic High Voltage (VIH)
2 — 2.4 V(2.2 V Typical)
Enable Logic Low Voltage (VIL)
0.8 — 1.2 V(1 V Typical)
Gate Output Fall Time (TF)
3 ns
Gate Output Rise Time (TR)
7 ns
High-Current Forward Voltage (VFHIGH)
0.4 V
High-Side Gate Driver Pull-Down Output Voltage (HGN)
-0.6 — 6.3 V
High-Side Gate Driver Pull-Up Output Voltage (HGP)
-0.6 — 6.3 V
High-Side Turn-Off Propagation Delay (THPHL)
22 ns
HTS Code
8542.39.0090
Human Body Model
2 kV
Input Hysteresis Voltage (VIHYS)
0.1 — 0.3 V(0.2 V Typical)
Input Low Hysteresis (VILHYS)
0.1 — 0.3 V(0.2 V Typical)
Input tri-state float voltage (VTRI)
1.4 — 1.8 V(1.6 V Typical)
Internal pull-down resistor (RIDN)
10 kΩ
Internal pull-up resistor (RIUP)
10 kΩ
Junction Temperature (Tj)
-40 — 150 °C
Low-Current Forward Voltage (VFLOW)
0.2 V
Low-Side Gate Driver Pull-Down Output Voltage (LGN)
-0.3 — 6.3 V
Low-Side Gate Driver Pull-Up Output Voltage (LGP)
-0.3 — 6.3 V
Low-Side Turn-Off Propagation Delay (TLPHL)
22 ns
Minimum Gate Output Pulse Width (TOPW)
55 ns
Minimum Input Pulse Width (TIPW)
5 ns
OTP Shutdown Hysteresis (TOTPHYS)
20 °C
OTP Shutdown Rising Threshold (TOTP)
165 °C
Output Peak Sin Current (IOL)
4.3 A
Output Peak Source Current (IOH)
1.7 A
Output Pull-Down Resistance (RDN)
1 Ω
Output Pull-Up Resistance (RUP)
2 Ω
PWM Input Range (PWM)
-0.3 — 6 V
Storage Temperature (Tstg)
-55 — 150 °C
Supply Voltage Range (VCC)
-0.3 — 6 V
Switch Node (SW)
-5 — 100 V
Switch on Resistance (RBST(ON))
4 Ω
Thermal Resistance Junction-Ambient
68.82 °C/W
Thermal Resistance Junction-Case
59.65 °C/W
Thermal Resistance, Junction to Board
16.94 °C/W
VCC Operating Current (ICCOP)
3 mA
VCC Overvoltage Hysteresis (VCCOVHYS)
0.25 V
VCC Overvoltage Rising Threshold (VCCOVR)
5.7 — 6.3 V(6 V Typical)
VCC Quiescent Current (ICCQ)
600 µA
VCC Undervoltage Hysteresis (VCCUVHYS)
0.3 V
VCC Undervoltage Rising Threshold (VCCUVR)
3.9 — 4.3 V(4.1 V Typical)
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | Surface mount Gate Drivers Half Bridge | Tape & Reel | 2,500 | PBFREE |
Resources
| Item | Type |
|---|---|
| CQFGD1003.PDF | Device Datasheet |
| Package Detail Document:GaN gate driver | Package Detail Document |