CTLDM304P-M832DS
4.2A,30V Surface mount MOSFET Dual P-Channel Enhancement Mode
Specifications
Case Type
TLM832DS
Common Source Input Capacitance (Ciss)
760 pF
Common Source Output Capacitance (Coss)
50 pF
Common Source Reverse Transfer Capacitance (Crss)
53 pF
Continuous Drain Current
4.2 A
Drain-Source Breakdown Voltage (BVDSS)
30 V
Drain-Source Voltage
30 V
ECCN Code
EAR99
Gate Leakage Current, Forward (IGSSF)
100 nA
Gate Leakage Current, Reverse (IGSSR)
100 nA
Gate Threshold Voltage (VGS(th))
0.7 — 1.3 V(1 V Typical)
Gate-Drain Charge (Qgd)
1.4 nC
Gate-Source Charge (Qgs)
1.8 nC
Gate-Source Voltage (VGS)
12 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-55 — 150 °C
Maximum Pulsed Drain Current
30 A
Power Dissipation
1.65 W
Saturation Drain Current (IDSS)
1 µA
Static Drain-Source On Resistance (rDS(ON))
0.075 Ω
Static Drain-Source On Resistance (rDS(ON))
0.07 Ω
Static Drain-Source On Resistance (rDS(ON))
0.12 Ω
Storage Temperature (Tstg)
-55 — 150 °C
Thermal Resistance Junction-Ambient
76 °C/W
Total Gate Charge (Qg)
6.4 nC
Turn Off Time (toff)
75 ns
Turn On Time (ton)
40 ns
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued | 4.2A,30V Surface mount MOSFET Dual P-Channel Enhancement Mode | Tape & Reel | 3,000 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Gold Bond Wire | Analytical Test Report |
| Analytical Test Report:Green Epoxy Molding Compound | Analytical Test Report |
| CTLDM304P-M832DS.PDF | Device Datasheet |
| Material Composition:TLM832DS | Material Composition |
| Package Detail Document:TLM832DS | Package Detail Document |
| Product EOL Notice:TLM832DS CASE | Product EOL Notice |
| Spice Model:Spice Model CTLDM304P-M832DS | Spice Model |