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AEM

CTLDM3590

160mA,20V Surface mount MOSFET N-Channel Enhancement Mode

Specifications

Case Type
TLM3D6D8
Common Source Input Capacitance (Ciss)
9 pF
Common Source Output Capacitance (Coss)
3 pF
Common Source Reverse Transfer Capacitance (Crss)
2.2 pF
Continuous Drain Current
160 mA
Drain-Source Breakdown Voltage (BVDSS)
20 V
Drain-Source Voltage
20 V
ECCN Code
EAR99
Forward Transconductance (gFS)
1300 mS
Gate Leakage Current, Forward (IGSSF)
100 nA
Gate Leakage Current, Reverse (IGSSR)
100 nA
Gate Threshold Voltage (VGS(th))
0.4 — 1 V
Gate-Drain Charge (Qgd)
0.138 nC
Gate-Source Charge (Qgs)
0.176 nC
Gate-Source Voltage (VGS)
8 V
HTS Code
8541.21.0095
Junction Temperature (Tj)
-65 — 150 °C
Maximum Pulsed Drain Current
800 mA
Power Dissipation
125 mW
Saturation Drain Current (IDSS)
0.1 µA
Saturation Drain Current (IDSS)
0.05 µA
Static Drain-Source On Resistance (rDS(ON))
10 Ω
Static Drain-Source On Resistance (rDS(ON))
6 Ω
Static Drain-Source On Resistance (rDS(ON))
4 Ω
Static Drain-Source On Resistance (rDS(ON))
3 Ω
Static Drain-Source On Resistance (rDS(ON))
7 Ω
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
1000 °C/W
Total Gate Charge (Qg)
0.458 nC
Turn Off Time (toff)
85 ns
Turn On Time (ton)
25 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued160mA,20V Surface mount MOSFET N-Channel Enhancement ModeTape & Reel10,000PBFREE

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