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AEM

CTLDM7002A-M621

280mA,60V Surface mount MOSFET N-Channel Enhancement Mode

Specifications

Case Type
TLM621
Common Source Input Capacitance (Ciss)
50 pF
Common Source Output Capacitance (Coss)
15 pF
Common Source Reverse Transfer Capacitance (Crss)
5 pF
Continuous Drain Current
280 mA
Continuous Source Current (Body Diode)
280 mA
Diode Forward On Voltage (VSD)
1.2 V
Drain-Gate Voltage
60 V
Drain-Source Breakdown Voltage (BVDSS)
60 V
Drain-Source On Voltage (VDS(ON))
1000 mV
Drain-Source On Voltage (VDS(ON))
150 mV
Drain-Source Voltage
60 V
ECCN Code
EAR99
Forward Transconductance (gFS)
80 mS
Gate Leakage Current, Forward (IGSSF)
100 nA
Gate Leakage Current, Reverse (IGSSR)
100 nA
Gate Threshold Voltage (VGS(th))
1 — 2.5 V
Gate-Drain Charge (Qgd)
0.148 nC
Gate-Source Charge (Qgs)
0.196 nC
Gate-Source Voltage (VGS)
40 V
HTS Code
8541.21.0095
Junction Temperature (Tj)
-65 — 150 °C
Maximum Pulsed Drain Current
1.5 A
Maximum Pulsed Source Current
1.5 A
On State Drain Current (ID(ON))
500 mA
Power Dissipation
900 mW
Saturation Drain Current (IDSS)
500 µA
Saturation Drain Current (IDSS)
1 µA
Static Drain-Source On Resistance (rDS(ON))
5 Ω
Static Drain-Source On Resistance (rDS(ON))
2 Ω
Static Drain-Source On Resistance (rDS(ON))
3.5 Ω
Static Drain-Source On Resistance (rDS(ON))
3 Ω
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
139 °C/W
Total Gate Charge (Qg)
0.592 nC
Turn Off Time (toff)
20 ns
Turn On Time (ton)
20 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued280mA,60V Surface mount MOSFET N-Channel Enhancement ModeBox5,000PBFREE
Discontinued280mA,60V Surface mount MOSFET N-Channel Enhancement ModeTape & Reel3,000PBFREE

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