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AEM

CTLDM7003-M621

280mA,50V Surface mount MOSFET N-Channel Enhancement Mode

Specifications

Case Type
TLM621
Common Source Input Capacitance (Ciss)
50 pF
Common Source Output Capacitance (Coss)
25 pF
Common Source Reverse Transfer Capacitance (Crss)
5 pF
Continuous Drain Current
280 mA
Diode Forward On Voltage (VSD)
1.4 V
Drain-Gate Voltage
50 V
Drain-Source Breakdown Voltage (BVDSS)
50 V
Drain-Source Voltage
50 V
ECCN Code
EAR99
Forward Transconductance (gFS)
200 mS
Gate Leakage Current, Forward (IGSSF)
2000 nA
Gate Leakage Current, Forward (IGSSF)
2000 nA
Gate Leakage Current, Forward (IGSSF)
100 nA
Gate Leakage Current, Reverse (IGSSR)
2000 nA
Gate Leakage Current, Reverse (IGSSR)
2000 nA
Gate Leakage Current, Reverse (IGSSR)
100 nA
Gate Threshold Voltage (VGS(th))
0.49 — 1 V
Gate-Drain Charge (Qgd)
0.156 nC
Gate-Source Charge (Qgs)
0.148 nC
Gate-Source Voltage (VGS)
12 V
HTS Code
8541.21.0095
Junction Temperature (Tj)
-65 — 150 °C
Maximum Pulsed Drain Current
1.5 A
Power Dissipation
900 mW
Saturation Drain Current (IDSS)
0.05 µA
Static Drain-Source On Resistance (rDS(ON))
2.5 Ω
Static Drain-Source On Resistance (rDS(ON))
2 Ω
Static Drain-Source On Resistance (rDS(ON))
3 Ω
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
139 °C/W
Total Gate Charge (Qg)
0.764 nC

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued280mA,50V Surface mount MOSFET N-Channel Enhancement ModeBox5,000PBFREE
Discontinued280mA,50V Surface mount MOSFET N-Channel Enhancement ModeTape & Reel3,000PBFREE

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