Specifications
Case Type
TLM621H
Common Source Input Capacitance (Ciss)
220 pF
Common Source Output Capacitance (Coss)
120 pF
Common Source Reverse Transfer Capacitance (Crss)
45 pF
Continuous Drain Current
1 A
Device Family
MOSFETs/JFETs
Diode Forward On Voltage (VSD)
1.1 V
Drain-Source Breakdown Voltage (BVDSS)
20 V
Drain-Source Voltage
20 V
ECCN Code
EAR99
Forward Transconductance (gFS)
4200 mS
Gate Leakage Current, Forward (IGSSF)
10000 nA
Gate Leakage Current, Reverse (IGSSR)
10000 nA
Gate Threshold Voltage (VGS(th))
0.5 — 1.2 V
Gate-Drain Charge (Qgd)
0.65 nC
Gate-Source Charge (Qgs)
0.25 nC
Gate-Source Voltage (VGS)
8 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-65 — 150 °C
Maximum Pulsed Drain Current
4 A
Power Dissipation
1.6 W
Saturation Drain Current (IDSS)
10 µA
Static Drain-Source On Resistance (rDS(ON))
0.25 Ω
Static Drain-Source On Resistance (rDS(ON))
0.14 Ω
Static Drain-Source On Resistance (rDS(ON))
0.1 Ω
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
75 °C/W
Total Gate Charge (Qg)
2.4 nC
Turn Off Time (toff)
140 ns
Turn On Time (ton)
25 ns
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued | 1A,20V Surface mount MOSFET N-Channel Enhancement Mode | Box | 5,000 | PBFREE | |
| Discontinued | 1A,20V Surface mount MOSFET N-Channel Enhancement Mode | Tape & Reel | 3,000 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Copper Alloy Leadframe | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Sn Plating | Analytical Test Report |
| CTLDM7120-M621H.PDF | Device Datasheet |
| Material Composition:TLM621H | Material Composition |
| Package Detail Document:TLM621H | Package Detail Document |
| Product EOL Notice:TLM621/H Case | Product EOL Notice |