CTLDM7120-M621H
1A,20V Surface mount MOSFET N-Channel Enhancement Mode
Specifications
Case Type
TLM621H
Common Source Input Capacitance (Ciss)
220 pF
Common Source Output Capacitance (Coss)
120 pF
Common Source Reverse Transfer Capacitance (Crss)
45 pF
Continuous Drain Current
1 A
Diode Forward On Voltage (VSD)
1.1 V
Drain-Source Breakdown Voltage (BVDSS)
20 V
Drain-Source Voltage
20 V
ECCN Code
EAR99
Forward Transconductance (gFS)
4200 mS
Gate Leakage Current, Forward (IGSSF)
10000 nA
Gate Leakage Current, Reverse (IGSSR)
10000 nA
Gate Threshold Voltage (VGS(th))
0.5 — 1.2 V
Gate-Drain Charge (Qgd)
0.65 nC
Gate-Source Charge (Qgs)
0.25 nC
Gate-Source Voltage (VGS)
8 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-65 — 150 °C
Maximum Pulsed Drain Current
4 A
Power Dissipation
1.6 W
Saturation Drain Current (IDSS)
10 µA
Static Drain-Source On Resistance (rDS(ON))
0.14 Ω
Static Drain-Source On Resistance (rDS(ON))
0.1 Ω
Static Drain-Source On Resistance (rDS(ON))
0.25 Ω
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
75 °C/W
Total Gate Charge (Qg)
2.4 nC
Turn Off Time (toff)
140 ns
Turn On Time (ton)
25 ns
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued | 1A,20V Surface mount MOSFET N-Channel Enhancement Mode | Box | 5,000 | PBFREE | |
| Discontinued | 1A,20V Surface mount MOSFET N-Channel Enhancement Mode | Tape & Reel | 3,000 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Copper Alloy Leadframe | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Sn Plating | Analytical Test Report |
| CTLDM7120-M621H.PDF | Device Datasheet |
| Material Composition:TLM621H | Material Composition |
| Package Detail Document:TLM621H | Package Detail Document |
| Product EOL Notice:TLM621/H Case | Product EOL Notice |