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AEM

CTLDM7120-M832D

1A,20V Surface mount MOSFET Dual N-Channel Enhancement Mode

Specifications

Case Type
TLM832D
Common Source Input Capacitance (Ciss)
220 pF
Common Source Output Capacitance (Coss)
120 pF
Common Source Reverse Transfer Capacitance (Crss)
45 pF
Continuous Drain Current
1 A
Diode Forward On Voltage (VSD)
1.1 V
Drain-Source Breakdown Voltage (BVDSS)
20 V
Drain-Source Voltage
20 V
ECCN Code
EAR99
Forward Transconductance (gFS)
4200 mS
Gate Leakage Current, Forward (IGSSF)
10000 nA
Gate Leakage Current, Reverse (IGSSR)
10000 nA
Gate Threshold Voltage (VGS(th))
0.5 — 1.2 V
Gate-Drain Charge (Qgd)
0.65 nC
Gate-Source Charge (Qgs)
0.25 nC
Gate-Source Voltage (VGS)
8 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-65 — 150 °C
Maximum Pulsed Drain Current
4 A
Power Dissipation
1.65 W
Saturation Drain Current (IDSS)
10 µA
Static Drain-Source On Resistance (rDS(ON))
0.14 Ω
Static Drain-Source On Resistance (rDS(ON))
0.1 Ω
Static Drain-Source On Resistance (rDS(ON))
0.25 Ω
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
76 °C/W
Total Gate Charge (Qg)
2.4 nC
Turn Off Time (toff)
140 ns
Turn On Time (ton)
25 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued1A,20V Surface mount MOSFET Dual N-Channel Enhancement ModeBox5,000PBFREE
Discontinued1A,20V Surface mount MOSFET Dual N-Channel Enhancement ModeTape & Reel3,000PBFREE

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