CTLDM7181-M832D
Surface mount MOSFET 1A,20V Dual: N-Channel/P-Channel MOSFET&860mA,20V
Specifications
Case Type
TLM832D
Common Source Input Capacitance (Ciss)
220 pF
Common Source Input Capacitance (Ciss)
200 pF
Common Source Output Capacitance (Coss)
60 pF
Common Source Output Capacitance (Coss)
120 pF
Common Source Reverse Transfer Capacitance (Crss)
80 pF
Common Source Reverse Transfer Capacitance (Crss)
45 pF
Continuous Drain Current
860 mA
Continuous Drain Current
950 mA
Continuous Drain Current
1 A
Continuous Source Current (Body Diode)
360 mA
Diode Forward On Voltage (VSD)
0.9 V
Diode Forward On Voltage (VSD)
1.1 V
Drain-Source Breakdown Voltage (BVDSS)
20 V
Drain-Source Breakdown Voltage (BVDSS)
20 V
Drain-Source Voltage
20 V
Drain-Source Voltage
20 V
ECCN Code
EAR99
Forward Transconductance (gFS)
2000 mS
Forward Transconductance (gFS)
4200 mS
Gate Leakage Current, Forward (IGSSF)
50 nA
Gate Leakage Current, Forward (IGSSF)
10000 nA
Gate Leakage Current, Reverse (IGSSR)
50 nA
Gate Leakage Current, Reverse (IGSSR)
10000 nA
Gate Threshold Voltage (VGS(th))
0.45 — 1 V(0.76 V Typical)
Gate Threshold Voltage (VGS(th))
0.5 — 1.2 V
Gate-Drain Charge (Qgd)
1.52 nC
Gate-Drain Charge (Qgd)
0.65 nC
Gate-Source Charge (Qgs)
0.36 nC
Gate-Source Charge (Qgs)
0.25 nC
Gate-Source Voltage (VGS)
8 V
Gate-Source Voltage (VGS)
8 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-65 — 150 °C
Maximum Pulsed Drain Current
4 A
Maximum Pulsed Drain Current
4 A
Maximum Pulsed Source Current
4 A
Power Dissipation
1.65 W
Saturation Drain Current (IDSS)
10 µA
Saturation Drain Current (IDSS)
0.5 µA
Static Drain-Source On Resistance (rDS(ON))
0.24 Ω
Static Drain-Source On Resistance (rDS(ON))
0.14 Ω
Static Drain-Source On Resistance (rDS(ON))
0.2 Ω
Static Drain-Source On Resistance (rDS(ON))
0.1 Ω
Static Drain-Source On Resistance (rDS(ON))
0.15 Ω
Static Drain-Source On Resistance (rDS(ON))
0.142 Ω
Static Drain-Source On Resistance (rDS(ON))
0.25 Ω
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
76 °C/W
Total Gate Charge (Qg)
3.56 nC
Total Gate Charge (Qg)
2.4 nC
Turn Off Time (toff)
25 ns
Turn Off Time (toff)
140 ns
Turn On Time (ton)
20 ns
Turn On Time (ton)
25 ns
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued | Surface mount MOSFET 1A,20V Dual: N-Channel/P-Channel MOSFET&860mA,20V | Tape & Reel | 3,000 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Gold Bond Wire | Analytical Test Report |
| Analytical Test Report:Green Epoxy Molding Compound | Analytical Test Report |
| CTLDM7181-M832D.PDF | Device Datasheet |
| Package Detail Document:TLM832D | Package Detail Document |
| Process Change Notice:TLM832D Leadframe change from | Process Change Notice |
| Product EOL Notice:BLANKET PDN-ALL OTHER PRODUCTS | Product EOL Notice |