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AEM

CTLDM8120-M621H

860mA,20V Surface mount MOSFET P-Channel Enhancement Mode

Specifications

Case Type
TLM621H
Common Source Input Capacitance (Ciss)
200 pF
Common Source Output Capacitance (Coss)
60 pF
Common Source Reverse Transfer Capacitance (Crss)
80 pF
Continuous Drain Current
950 mA
Continuous Drain Current
860 mA
Continuous Source Current (Body Diode)
360 mA
Diode Forward On Voltage (VSD)
0.9 V
Drain-Source Breakdown Voltage (BVDSS)
20 V
Drain-Source Voltage
20 V
ECCN Code
EAR99
Forward Transconductance (gFS)
2000 mS
Gate Leakage Current, Forward (IGSSF)
50 nA
Gate Leakage Current, Reverse (IGSSR)
50 nA
Gate Threshold Voltage (VGS(th))
0.45 — 1 V(0.76 V Typical)
Gate-Drain Charge (Qgd)
1.52 nC
Gate-Source Charge (Qgs)
0.36 nC
Gate-Source Voltage (VGS)
8 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-65 — 150 °C
Maximum Pulsed Drain Current
4 A
Maximum Pulsed Source Current
4 A
Power Dissipation
1.6 W
Saturation Drain Current (IDSS)
0.5 µA
Static Drain-Source On Resistance (rDS(ON))
0.2 Ω
Static Drain-Source On Resistance (rDS(ON))
0.142 Ω
Static Drain-Source On Resistance (rDS(ON))
0.15 Ω
Static Drain-Source On Resistance (rDS(ON))
0.24 Ω
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
75 °C/W
Total Gate Charge (Qg)
3.56 nC
Turn Off Time (toff)
25 ns
Turn On Time (ton)
20 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued860mA,20V Surface mount MOSFET P-Channel Enhancement ModeBox5,000PBFREE
Discontinued860mA,20V Surface mount MOSFET P-Channel Enhancement ModeTape & Reel3,000PBFREE

Resources

ItemType
Analytical Test Report:Copper Alloy LeadframeAnalytical Test Report
Analytical Test Report:Die AttachAnalytical Test Report
Analytical Test Report:Sn PlatingAnalytical Test Report
CTLDM8120-M621H.PDFDevice Datasheet
Material Composition:TLM621HMaterial Composition
Package Detail Document:TLM621HPackage Detail Document
Product EOL Notice:TLM621/H CaseProduct EOL Notice

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