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AEM

CTLM7110-M832D

Surface mount Module 1A,20V N-Channel MOSFET&1A,40V Low VF Schottky Rectifier

Specifications

Case Type
TLM832D
Common Source Input Capacitance (Ciss)
220 pF
Common Source Output Capacitance (Coss)
120 pF
Common Source Reverse Transfer Capacitance (Crss)
45 pF
Continuous Drain Current
1 A
Continuous Forward Current
1 A
Diode Forward On Voltage (VSD)
1.1 V
Drain-Source Breakdown Voltage (BVDSS)
20 V
Drain-Source Voltage
20 V
ECCN Code
EAR99
Forward Transconductance (gFS)
4200 mS
Forward Voltage (VF)
0.29 V
Forward Voltage (VF)
0.36 V
Forward Voltage (VF)
0.45 V
Forward Voltage (VF)
0.55 V
Gate Leakage Current, Forward (IGSSF)
10000 nA
Gate Leakage Current, Reverse (IGSSR)
10000 nA
Gate Threshold Voltage (VGS(th))
0.5 — 1.2 V
Gate-Drain Charge (Qgd)
0.65 nC
Gate-Source Charge (Qgs)
0.25 nC
Gate-Source Voltage (VGS)
8 V
HTS Code
8541.50.0080
Junction Capacitance (CJ)
50 pF
Junction Temperature (Tj)
-65 — 150 °C
Maximum Pulsed Drain Current
4 A
Peak Forward Surge Current
10 A
Peak Repetitive Forward Current
3.5 A
Peak Repetitive Reverse Voltage
40 V
Power Dissipation
1.65 W
Reverse Breakdown Voltage (BVR)
40 V
Reverse Voltage Leakage Current (IR)
20 µA
Reverse Voltage Leakage Current (IR)
50 µA
Reverse Voltage Leakage Current (IR)
10 µA
Saturation Drain Current (IDSS)
10 µA
Static Drain-Source On Resistance (rDS(ON))
0.14 Ω
Static Drain-Source On Resistance (rDS(ON))
0.1 Ω
Static Drain-Source On Resistance (rDS(ON))
0.25 Ω
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
76 °C/W
Total Gate Charge (Qg)
2.4 nC
Turn Off Time (toff)
140 ns
Turn On Time (ton)
25 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
DiscontinuedSurface mount Module 1A,20V N-Channel MOSFET&1A,40V Low VF Schottky RectifierTape & Reel3,000PBFREE

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