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AEM

CTLT953-M833

100V,5A,4.5W Surface mount Transistor-Bipolar Power (>1A) PNP Low VCE(SAT)

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
1.2 V
Case Type
TLM833
Collector-Base Breakdown Voltage (BVCBO)
140 V
Collector-Base Cutoff Current (ICBO)
1000 nA
Collector-Base Cutoff Current (ICBO)
50 nA
Collector-Base Voltage
140 V
Collector-Emitter Breakdown Voltage (BVCER)
140 V
Collector-Emitter Breakdown Voltage (BVCEO)
100 V
Collector-Emitter Cutoff Current (ICER)
0.05 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
220 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
420 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
50 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
120 mV
Collector-Emitter Voltage (VCEO)
100 V
Continuous Collector Current
5 A
Current Gain-Bandwidth Product (fT)
150 MHz
DC Current Gain (hFE)
100 — 300 x10³(200 x10³ Typical)
DC Current Gain (hFE)
50 x10³
DC Current Gain (hFE)
30 x10³
DC Current Gain (hFE)
15 x10³
DC Current Gain (hFE)
100 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Cutoff Current (IEBO)
10 nA
Emitter-Base Voltage
6 V
HTS Code
8541.29.0065
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
45 pF
Power Dissipation
4 W
Power Dissipation
2.5 W
Power Dissipation
4.5 W
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
31.25 °C/W
Thermal Resistance Junction-Ambient
50 °C/W
Thermal Resistance Junction-Ambient
27.78 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued100V,5A,4.5W Surface mount Transistor-Bipolar Power (>1A) PNP Low VCE(SAT)Box5,000PBFREE

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